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  • SICTECH MHD silicon carbide heat element imagwiritsa ntchito ukadaulo waposachedwa kwambiri ku China ndi kunja. Kutentha kwakukulu kumatha kufika 1625 madigiri Celsius. Ili ndi kachulukidwe kakang'ono komanso porosity yotsika. Itha kulimbana bwino ndi kukokoloka kwa mpweya woyipa, nthunzi yamadzi ndi ma oxide achitsulo. Kutha msinkhu, kugwiritsa ntchito nthawi yayitali, kuchepetsedwa pafupipafupi, kutsitsa mtengo wopangira ogwiritsa ntchito, oyenera malo ovuta monga magalasi, zamagetsi ndi zida zachitsulo zamtengo wapatali.
    Kutentha kwa silicon carbide ya Huanneng SICTECH imatha kukupatsirani zida ndi matenthedwe osiyanasiyana, zotenthetsera ma tubular zopanda pake, zotenthetsera zolimba, zotenthetsera zauzimu, ndipo zitha kupangidwa kutengera kasitomala. SICTECH silicon carbide Kutentha kwa zinthu kumatha kuperekanso zokutira zosiyanasiyana malinga ndi mapangidwe amoto ambiri; imatha kutsekereza mpweya wosakhazikika monga nthunzi yamadzi, nayitrogeni, haidrojeni, mpweya wamchere, ma oxide achitsulo, ndi zina zambiri, zochepetsera kukokoloka kwa zinthu za silicon carbide zotentha ndi mpweya woyipa.

    Makhalidwe Athupi

       

    Makhalidwe Zinthu

    Chigawo

    Lembani

    GD / U / W.

    HGD

    LS / LD

    Kukhazikika Kwachinyengo

    3.2

    3.2

    3.1

    Kuchuluka kwa Bulk

    2.5

    2.58

    2.8

    Zikuwoneka Kukhululuka

    %

    23

    20

    5

    Kupindika Mphamvu

    MPa pa 25 ℃

    50

    60

    98

    Kutentha Kwake

    kj / kg + ℃ pa 25 ℃ -1300 ℃

    1.0

    1.0

    1.0

    Kutentha Kwambiri

    W / m + ℃ pa 1000 ℃

    12-18

    14-19

    16-21

    Mwadzina Kukaniza

    Ω masentimita pa 1000 ℃

    0.08

    0.1

    0.016

    Kuchuluka kwa Kutentha Kwambiri

    1000 ℃ (X 10-6 / ℃)

    4.5

    4.5

    4.5